ZXM64P035L3
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· TO220 package
APPLICATIONS
· 100W Class D Audio Output Stage
· Motor Control
ORDERING INFORMATION
DEVICE
ZXM64P035L3
DEVICE MARKING
· ZXM6
MULTIPLES
1000
Front View
4P035
ISSUE 1 - JUNE 2004
1
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相关代理商/技术参数
ZXM64P035L3(1) 制造商:ZETEX 制造商全称:ZETEX 功能描述:
ZXM64P03X 制造商:Diodes Incorporated 功能描述:MOSFET P MSOP-8 制造商:Diodes Incorporated 功能描述:MOSFET, P, MSOP-8 制造商:DIODES 功能描述:MOSFET, P, MSOP-8, Transistor Polarity:P Channel, Continuous Drain Current Id:3. 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 30V, -3.8mA, MSOP, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.8mA, Drain Source Voltage Vds:30V, On Resistance Rds(on):75mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:-1V, No. of Pins:8 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, P, MSOP-8, Transistor Polarity:P Channel, Continuous Drain Current Id:3.
ZXM64P03X_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM64P03XTA 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM64P03XTC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM66N02N8TA 功能描述:MOSFET N-CHAN HD 20V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ZXM66N03N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66N03N8TA 功能描述:MOSFET N-CHAN HD 30V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件